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CAS#:24304-00-5
Molecular Formula:AlN
Purity:99.5 %、99.9 %
Specification Model:– 325 mesh (40 mic aps).etc
Hazardous Class:NO
EINECS No.:246-140-8
Category:

Description

Epitaxially grown thin film crystalline aluminium nitride is used for surface acoustic wave sensors (SAWs) deposited on silicon wafers because of AlN’s piezoelectric properties. One application is an RF filter which is widely used in mobile phones, which is called a thin film bulk acoustic resonator (FBAR).